STRUCTURAL INVESTIGATION OF II-VI COMPOUND SEMICONDUCTOR QUANTUM WIRES USING TRIPLE-AXIS X-RAY-DIFFRACTOMETRY

Corrugated CdZnTe substrates and quantum wires fabricated by dry etchi ng techniques from (CdTe)/(MnTe) superlattices (SLs), which were grown by a combination of molecular beam and atomic layer epitaxy, were inv estigated with respect to their structural properties. The SLs were gr own pseudomorphically on Cd0.95Zn0.04Te(001) oriented substrates. X-ra y reciprocal space mapping around (004) and (115) reciprocal lattice p oints was used to measure the periods both along the growth and the la teral corrugation direction. The arrays were defined by holographic li thography and reactive ion etching with a typical period of about 400 nm. For the analysis of the corrugations, a kinematical X-ray diffract ion model is used which yields their geometrical shape and also inform ations on the crystalline damage. Furthermore, it turns out that the r eactive ion etching process causes an increase of the mean SL lattice constant of about 0.1% to 0.15% along the growth direction.