THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

Authors
NISHIKAWA Y ISHIKAWA M PARBROOK PJ ONOMURA M SAITO S HATAKOSHI GI
Citation
Y. Nishikawa et al., THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 807-811
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
807 - 811
Database
ISI
SICI code
0022-0248(1995)150:1-4<807:TONZGB>2.0.ZU;2-3
Abstract
The effect of thermal annealing on nitrogen-doped ZnSe grown by molecu lar beam epitaxy has been investigated as a function of nitrogen conce ntration. It was found that thermal stability of the nitrogen accepter s in highly nitrogen-doped ZnSe markedly degraded. Furthermore, in ord er to avoid significant decreases in net acceptor concentration by the rmal annealing, the nitrogen concentration should be kept within the r egion of high electrical activity, that is below 1x10(18) cm(-3).