CHARACTERIZATION OF N-DOPED MGZNSSE COMPOUND SYSTEM GROWN ON INTENTIONALLY MISORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

The optical and electrical characteristics of the nitrogen-doped MgZnS Se compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy, were systemically investigated. With increa sing substrate misorientation angle (SMA), a blue-shift of the photolu minescence peak was observed for MgZnSSe and ZnSSe, indicating the inc reased incorporation ratio of S and Mg into crystals, With it, the net acceptor concentration (N-A-N-D) decreased in the range less than 10( 17) cm(-3). On the contrary, for ''sulfur-free'' MgZnSe and ZnSe compo unds, the (N-A - N-D) value was increased with SMA. This fact suggeste d that the presence of sulfur and the enhanced incorporation of that c aused the degraded p-doping characteristics in MgZnSSe on misoriented substrates.