LI-ACCEPTOR DOPING IN ZNS GAAS BY POST-HEATED MOLECULAR-BEAM EPITAXY/

Li-doping of ZnS/GaAs layers by means of molecular beam epitaxial (MBE ) growth using post-heated molecular beams is reported. Low-temperatur e photoluminescence measurements and secondary ion mass spectrometry h ave clarified that the Li atoms act as accepters and donor Ga is incor porated from the substrate. It is also found that under higher doping levels the growth rate is considerably reduced. Together with the refl ection high-energy electron diffraction (RHEED) results, this behavior is attributed to some interaction between Li and S atoms on the growi ng surface.