REDUCTION OF P-ZNSE P-GAAS NONOHMIC BARRIER BY INSERTING A GAN BUFFERLAYER/

Nitrogen (N) radical irradiated GaAs was investigated by Auger analysi s and reflection high-energy electron diffraction. N radical beam irra diation on GaAs causes an exchange of As atoms for N atoms, consequent ly forming a GaN layer onto the GaAs surface without a Ga source. No d egradation of the ZnSe layers was observed when they were grown on GaA s substrates with GaN buffer layers. The current-voltage and capacitan ce-voltage characteristics of p-ZnSe/p-GaAs heterodiodes are examined. The necessary voltage for hole injection across the p-ZnSe/p-GaAs het erojunction is reduced to about half when a thin GaN buffer layer is i nserted into the junction.