Strained layer InAs/GaInSb superlattices have been shown to have many
desirable optical and transport properties. The piezoelectric field al
ong the (111) orientation causes a tilting of the energy bands, leadin
g to novel opto-electronic applications. We have carried out the growt
h of these superlattices on (111) on- and off-axis GaSb substrates. A
wide range of growth conditions has been investigated, and high-qualit
y superlattices are demonstrated in a narrow temperature and flux rang
e, as monitored by reflection high-energy electron diffraction (RHEED)
reconstruction and post-growth X-ray diffraction analysis.