(111)INAS GAINSB STRAINED-LAYER SUPERLATTICE GROWTH INVESTIGATION/

Strained layer InAs/GaInSb superlattices have been shown to have many desirable optical and transport properties. The piezoelectric field al ong the (111) orientation causes a tilting of the energy bands, leadin g to novel opto-electronic applications. We have carried out the growt h of these superlattices on (111) on- and off-axis GaSb substrates. A wide range of growth conditions has been investigated, and high-qualit y superlattices are demonstrated in a narrow temperature and flux rang e, as monitored by reflection high-energy electron diffraction (RHEED) reconstruction and post-growth X-ray diffraction analysis.