(111)INAS GAINSB STRAINED-LAYER SUPERLATTICE GROWTH INVESTIGATION/

Citation
Da. Reich et al., (111)INAS GAINSB STRAINED-LAYER SUPERLATTICE GROWTH INVESTIGATION/, Journal of crystal growth, 150(1-4), 1995, pp. 849-852
Citations number
7
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
849 - 852
Database
ISI
SICI code
0022-0248(1995)150:1-4<849:(GSSGI>2.0.ZU;2-1
Abstract
Strained layer InAs/GaInSb superlattices have been shown to have many desirable optical and transport properties. The piezoelectric field al ong the (111) orientation causes a tilting of the energy bands, leadin g to novel opto-electronic applications. We have carried out the growt h of these superlattices on (111) on- and off-axis GaSb substrates. A wide range of growth conditions has been investigated, and high-qualit y superlattices are demonstrated in a narrow temperature and flux rang e, as monitored by reflection high-energy electron diffraction (RHEED) reconstruction and post-growth X-ray diffraction analysis.