STRUCTURAL AND TRANSPORT-PROPERTIES OF INAS ALSB SUPERLATTICES/

We report the demonstration of molecular beam epitaxy (MBE) grown InAs /AlSb superlattices with properties suitable for cladding layer materi als in semiconductor diode lasers operating in the 2-5 mu m spectral r ange. X-ray rocking curves of these superlattices reveal excellent str uctural quality and small lattice mismatch (Delta a/a = 1.2 X 10(-3)) with respect to a GaSb substrate. Hall measurements reveal that contro llable n-type doping of InAs/AlSb superlattices can be achieved by sel ectively codepositing silicon during growth of InAs layers. p-Type dop ing is performed by codepositing beryllium during growth of AlSb layer s. InAs/AlSb superlattice p-n junctions have been fabricated and teste d, yielding classical p-n diode current-voltage behavior. A simple dou ble heterojunction diode laser, incorporating InAs/AlSb superlattice c ladding layers and a GaxIn1-xAsySb1-y active layer, is demonstrated. T he emission wavelength of the laser is 2.42 mu m (2.50 mu m) at 95 K ( 180 K).