We report the demonstration of molecular beam epitaxy (MBE) grown InAs
/AlSb superlattices with properties suitable for cladding layer materi
als in semiconductor diode lasers operating in the 2-5 mu m spectral r
ange. X-ray rocking curves of these superlattices reveal excellent str
uctural quality and small lattice mismatch (Delta a/a = 1.2 X 10(-3))
with respect to a GaSb substrate. Hall measurements reveal that contro
llable n-type doping of InAs/AlSb superlattices can be achieved by sel
ectively codepositing silicon during growth of InAs layers. p-Type dop
ing is performed by codepositing beryllium during growth of AlSb layer
s. InAs/AlSb superlattice p-n junctions have been fabricated and teste
d, yielding classical p-n diode current-voltage behavior. A simple dou
ble heterojunction diode laser, incorporating InAs/AlSb superlattice c
ladding layers and a GaxIn1-xAsySb1-y active layer, is demonstrated. T
he emission wavelength of the laser is 2.42 mu m (2.50 mu m) at 95 K (
180 K).