GAN GROWTH BY A CONTROLLABLE RF-EXCITED NITROGEN-SOURCE

The group III nitrides have attracted increasing interest because of t heir significant potential in optoelectronics such as blue emitter and high temperature electronics. In order to take advantage of bandgap e ngineering of heterostructures such as GaN/AlN, a controllable growth technique is highly desired. The growth of group III nitrides by MBE ( molecular beam epitaxy) requires using energetic nitrogen species whic h can be generated by techniques such as ion, RF (radio-frequency) and ECR (electron cyclotron resonance) sources. We report nitride results using an RF source to achieve epitaxy on sapphire. The nitrogen flux. has been carefully characterized and related to the GaN quality. Scho ttky diode and ultra-violet (UV) photo-response are also reported.