PROSPECTS OF SIGE HETERODEVICES

Authors
KASPER E
Citation
E. Kasper, PROSPECTS OF SIGE HETERODEVICES, Journal of crystal growth, 150(1-4), 1995, pp. 921-925
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
921 - 925
Database
ISI
SICI code
0022-0248(1995)150:1-4<921:POSH>2.0.ZU;2-U
Abstract
State-of-the-art microelectronics is based on silicon integrated circu its with constantly shrinking minimal lateral dimensions. SiGe heterod evices offer compatibility with this silicon technology and also utili zation of heterostructure effects. In this review mainly the existing device concepts, the advantages and limits of the SiGe/Si system and t he realization of device structures by molecular beam epitaxy are desc ribed.