MOLECULAR-BEAM EPITAXY GROWTH OF GE ON SI(111) SUBSTRATES COVERED BY A SIO2 MASK

The chemical reaction of Ge beam with thermally grown SiO2 in ultra-hi gh vacuum (UHV) producing volatile Ge and Si oxides was described. Usi ng this experimental result, a Ge film grown in the windows of the SiO 2 mask at the Si(111) substrate without leaving any Ge residuals at th e SiO2 was realized. The Ge film grown in the mask windows was formed by islands. The transition from coherent Stranski-Krastanov (SK) mode to true SK mode for Ge growing at the Si substrate was discussed.