TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION IN SI MOLECULAR-BEAM EPITAXIAL-GROWTH ON THE SI(111) ROOT-3X-ROOT-3-B SURFACE

Si epitaxial growth on a 1 monolayer (ML) boron-adsorbed Si(lll) surfa ce was studied. Reflection high-energy electron diffraction (RHEED) in tensity oscillations revealed that when the substrate temperature was below 600 degrees C, layer-by-layer growth with 4 ML high two-dimensio nal (2D) islands occurred as long as the surface segregated boron was more than 1/3 ML. On the other hand, layer-by-layer growth with normal 2 ML high 2D islands occurred at 600 degrees C even though the surfac e segregated boron was more than 1/3 ML. This result also indicates th at the surface segregated boron suppresses the Si surface migration.