CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES

Cathodoluminescence (CL) imaging and spectroscopy have been used to ch aracterize SiGe quantum wires grown by gas source molecular beam epita xy (GS-MBE) on V-groove patterned substrates. CL spectra recorded at T approximate to 5 K contained three separate SiGe no-phonon luminescen ce features and their transverse optic phonon replicas. Monochromatic CL imaging recorded in cross section reveals that the three different luminescence features are related to the SiGe(100) quantum wells, SiGe (111) quantum wells and the SiGe quantum wire. CL images from the SiGe (100) reveal that the low temperature (T = 5-30 K) images are broadene d by exciton diffusion, whereas at higher temperatures (T = 30-70 K) t he CL images become sharper due to non-excitonic recombination.