PREPARATION OF BABIO3 THIN-FILMS USING AN OXYGEN RADICAL BEAM SOURCE

Citation
M. Iyori et al., PREPARATION OF BABIO3 THIN-FILMS USING AN OXYGEN RADICAL BEAM SOURCE, Journal of crystal growth, 150(1-4), 1995, pp. 1086-1089
Citations number
15
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
1086 - 1089
Database
ISI
SICI code
0022-0248(1995)150:1-4<1086:POBTUA>2.0.ZU;2-2
Abstract
Films of BaBiO3 (BBO), which is the matrix of the Ba-1-x K-x BiO3 (BKB O) superconductor, have been grown by molecular beam epitaxy (MBE) usi ng an oxygen radical beam source. Crystallization of BBO films with (1 10) orientation was successfully confirmed at the low temperature of 3 00 degrees C. According to the characterization for BBO films by X-ray photoelectron spectroscopy (XPS), in spite of the BBO thin film being synthesized at room temperature (RT), the film had the bismuth chemic al state which is proper for both BBO and BKBO. This result indicates that the oxygen radical beam source is a useful activated oxygen sourc e for the deposition of superconducting oxide films.