Epitaxial BaTiO3 single crystals were grown on Pt/MgO (Pt for electrod
es, MgO For substrates) by means of the activated reactive evaporation
technique, X-ray diffraction patterns were measured to clarify the pr
operties such as the temperature dependence of lattice parameters. It
was found that the temperature dependence of lattice parameters and in
tegrated intensities of Bragg reflections showed different behavior de
pending on the film thickness. The relative dielectric constant epsilo
n(r) was measured in order to investigate the dielectric properties of
the films. Film crystals of BaTiO3 showed the phase transitions which
are different from those in hulk state.