CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS GROWN ON ALGAAS GAAS(100) HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/

Ferroelectric BaMgF4 films have been grown on AlGaAs/GaAs(100) high-el ectron-mobility transistor (HEMT) structures. BaMgF4 films in which th e direction of spontaneous polarization has a finite angle to the subs trate surface can be obtained on the HEMT structure at growth temperat ures of 500-600 degrees C, However, it is shown that the growth temper ature is limited to about 550 degrees C, because the AlGaAs/GaAs inter face becomes disordered by the diffusion of Mg atoms into the HEMT str ucture when the growth temperature is 600 degrees C.