HIGH-QUALITY CDF2 LAYER GROWTH ON CAF2 SI(111)/

Epitaxial CdF2 was grown on the coherent or relaxed CaF2/Si(111) by mo lecular beam epitaxy. The structures were characterized by reflection high-energy electron diffraction, Rutherford backscattering spectrosco py and double-crystal X-ray diffraction. It was shown that the crystal linity of the CdF2 layer grown on the CaF2/Si(111) structure, where th e CaF2 was coherently grown on the Si, was quite good so as to obtain 51 are sec of full width at half maximum of X-ray diffraction.