GROWTH BY MOLECULAR-BEAM EPITAXY AND STRUCTURAL STUDY OF LATTICE-MATCHED MGXCA1-XF2 FILMS ON SILICON

Citation
Nl. Yakovlev et Yv. Shusterman, GROWTH BY MOLECULAR-BEAM EPITAXY AND STRUCTURAL STUDY OF LATTICE-MATCHED MGXCA1-XF2 FILMS ON SILICON, Journal of crystal growth, 150(1-4), 1995, pp. 1119-1121
Citations number
7
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
1119 - 1121
Database
ISI
SICI code
0022-0248(1995)150:1-4<1119:GBMEAS>2.0.ZU;2-U
Abstract
Epitaxial films of MgxCa1-xF2 solid solutions were grown by molecular beam epitaxy. The admixture of MgF2 increases significantly the decay length of electron diffraction intensity oscillations during the growt h. X-ray diffraction spectra show that the films are matched to silico n at MgF2 content x = 0.2.