The initial stages of Ag growth on both Sb-modified and As-terminated
GaAs(001) surfaces are investigated by reflection high-energy electron
diffraction (RHEED) and core-level photoelectron spectroscopy (PES).
Sb atom segregation is detected on silver films grown on the Sb-modifi
ed surfaces, while substrate atom segregation is not detected on As-te
rminated surfaces. After thick silver growth, streaks perpendicular to
the substrate are observed on the [($) over bar 110] RHEED pattern, w
hich are not observed on the As-terminated surface. This suggests that
surface flattening is induced by segregated Sb atoms bonding to silve
r atoms.