INITIAL-STAGES OF AG GROWTH ON SB-TERMINATED GAAS(001)

Citation
F. Maeda et al., INITIAL-STAGES OF AG GROWTH ON SB-TERMINATED GAAS(001), Journal of crystal growth, 150(1-4), 1995, pp. 1164-1168
Citations number
7
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
1164 - 1168
Database
ISI
SICI code
0022-0248(1995)150:1-4<1164:IOAGOS>2.0.ZU;2-8
Abstract
The initial stages of Ag growth on both Sb-modified and As-terminated GaAs(001) surfaces are investigated by reflection high-energy electron diffraction (RHEED) and core-level photoelectron spectroscopy (PES). Sb atom segregation is detected on silver films grown on the Sb-modifi ed surfaces, while substrate atom segregation is not detected on As-te rminated surfaces. After thick silver growth, streaks perpendicular to the substrate are observed on the [($) over bar 110] RHEED pattern, w hich are not observed on the As-terminated surface. This suggests that surface flattening is induced by segregated Sb atoms bonding to silve r atoms.