MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF EPITAXIAL GASE FILMS ON (001)GAAS

We have successfully grown GaSe films on (001)GaAs by molecular beam e pitaxy (MBE). Each unit layer of GaSe was grown toward the two directi ons on (001)GaAs, while the epitaxial GaSe films whose c-axis inclined toward the only one direction were obtained by using slightly misorie nted (001)GaAs. Furthermore, we characterized the interface between ep itaxial GaSe and misoriented (001)GaAs by transmission electron micros copy (TEM), and it was found that the GaSe layers were grown along the {111} plane in the intermediate region of 0.7 nm from the interface a nd that the obtained film was arranged in gamma-type.