THE EFFECT OF GROWTH TEMPERATURE, DELTA-DOPING AND BARRIER COMPOSITION ON MOBILITIES IN SHALLOW ALGAAS-GAAS 2-DIMENSIONAL ELECTRON GASES

Authors
HOLLAND MC SKURAS E DAVIES JH LARKIN IA LONG AR STANLEY CR
Citation
Mc. Holland et al., THE EFFECT OF GROWTH TEMPERATURE, DELTA-DOPING AND BARRIER COMPOSITION ON MOBILITIES IN SHALLOW ALGAAS-GAAS 2-DIMENSIONAL ELECTRON GASES, Journal of crystal growth, 150(1-4), 1995, pp. 1215-1219
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
1215 - 1219
Database
ISI
SICI code
0022-0248(1995)150:1-4<1215:TEOGTD>2.0.ZU;2-T
Abstract
A series of two-dimensional electron gas (2DEG) structures have been g rown with the 2DEG only 28 nm from the surface. The effects of growth temperature and delta-doping density have been investigated, and a com parison has been made between AlAs and Al0.3Ga0.7As barriers. A mobili ty of 330,000 cm(2) V-1 s(-1) at 4 K has been measured for a shallow 2 DEG with an Al0.3Ga0.7As barrier, which is the highest reported for su ch a structure.