OPTIMIZED MOLECULAR-BEAM EPITAXIAL-GROWTH TEMPERATURE PROFILE FOR HIGH-PERFORMANCE ALINAS GAINAS SINGLE-QUANTUM-WELL HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURES/

In molecular beam epitaxy (MBE) grown AlInAs/GaInAs single quantum wel l high electron mobility transistor structures, the use of low growth temperature for layers below the channel to suppress Si movement is ma ndatory. An optimized growth temperature profile has been elaborated a s a prerequisite to reach high carrier concentrations in combination w ith high mobilities. The impact of an optimum growth temperature profi le on device performance is demonstrated in devices with a saturation current of up to 1000 mA/mm.