GROWTH-CONDITIONS AND DEVICE PERFORMANCE OF INGAAS ALGAAS PSEUDOMORPHIC INVERTED HIGH-ELECTRON-MOBILITY TRANSISTOR/

Authors
KAWAGUCHI T SATO M FUJISHIRO HI NISHI S
Citation
T. Kawaguchi et al., GROWTH-CONDITIONS AND DEVICE PERFORMANCE OF INGAAS ALGAAS PSEUDOMORPHIC INVERTED HIGH-ELECTRON-MOBILITY TRANSISTOR/, Journal of crystal growth, 150(1-4), 1995, pp. 1256-1260
Citations number
5
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
1256 - 1260
Database
ISI
SICI code
0022-0248(1995)150:1-4<1256:GADPOI>2.0.ZU;2-F
Abstract
Growth conditions of InGaAs/AlGaAs pseudomorphic inverted high electro n mobility transistor (PI-HEMT) structures have been studied. In addit ion, a new device structure with an InGaAs channel below the critical thickness has been examined. We also investigated misfit dislocations and electron transport properties of PI-HEMTs with various InGaAs chan nel layer widths above the critical layer thicknesses.