CONTINUOUS MOLECULAR-BEAM EPITAXY OF ARSENIDES AND PHOSPHIDES APPLIEDTO DEVICE STRUCTURES ON INP SUBSTRATES

We report on a standard molecular beam epitaxial (MBE) system devoted to the growth on InP substrates and which is equipped with arsenic and phosphorus solid sources. Procedures were developed to handle phospho rus. The major donor impurity in InP epilayers was identified. The pho sphorus source was applied to the InP substrate desoxidation under P-2 , and to the continuous growth of arsenide and phosphide layers, Low c ross contamination by As or P was achieved by using valved cells. We i ntroduced phosphide layers in structures for devices (lasers, photodet ectors, heterojunction bipolar transistors (HBTs) and high electron mo bility transistors (HEMTs). This allowed us to improve the device perf ormance.