MOLECULAR-BEAM EPITAXY GROWTH OF LATTICE-MATCHED ALGAINAS GAINAS MULTIPLE-QUANTUM-WELL DISTRIBUTED-FEEDBACK LASER STRUCTURES WITH GRATINGS DEFINED BY IMPLANTATION ENHANCED INTERMIXING/

Authors
KUNZEL H BOTTCHER J HASE A HOFSASS V KADEN C SCHWEIZER H
Citation
H. Kunzel et al., MOLECULAR-BEAM EPITAXY GROWTH OF LATTICE-MATCHED ALGAINAS GAINAS MULTIPLE-QUANTUM-WELL DISTRIBUTED-FEEDBACK LASER STRUCTURES WITH GRATINGS DEFINED BY IMPLANTATION ENHANCED INTERMIXING/, Journal of crystal growth, 150(1-4), 1995, pp. 1323-1327
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
1323 - 1327
Database
ISI
SICI code
0022-0248(1995)150:1-4<1323:MEGOLA>2.0.ZU;2-Z
Abstract
AlGAInAs/GaInAs multiple quantum wells (MQWs) are particularly suited for planar device integration using local refractive index modificatio n by masked implantation enhanced intermixing (MIEI). Suitable molecul ar beam epitaxy (MBE) growth conditions are elaborated to achieve 1.3 mu m AlGaInAs/GaInAs MQW distributed feedback (DFB) lasers taking adva ntage of the capability of the MIEI process to define the gratings. Hi gh-quality MBE overgrowth on AlcaInAs necessary for device completion after H radical treatment is demonstrated.