SELECTIVE MOLECULAR-BEAM EPITAXIAL-GROWTH FOR MULTIFUNCTION MICROWAVEMONOLITHIC AND OPTOELECTRONIC INTEGRATED-CIRCUITS

Multifunction microwave monolithic integrated circuits (MMICs) and opt o-electronic integrated circuits (OEICs) on both GaAs and InP based su bstrates have been demonstrated by a solid source molecular beam fpita sial (MBE) selective regrowth process. Typical MBE regrown 0.25 mu m p seudomorphic high electron mobility transistors (PHEMTs) have demonstr ated an extrinsic transconductance, g(m). of over 560 mS/mm with an ex trinsic current gain cut-off frequency of 70 GHz with good multifuncti on MMIC circuit yield ( > 70%). For MBE selectively regrown, lattice m atched 0.15 mu m InAlAs/InGaAs/InP high electron mobility transistor ( HEMTs). an extrinsic g(m), of 1000 mS/mm with a current gain cut-off f requency of approximately 200 GHz have been achieved. Using the small area (e.g., 20 mu m or less in dimension) MBE selective regrowth to pr ovide two-dimensional strain relaxation. a large lattice mismatched In 0.53Ga0.47As MIN photodetector has been demonstrated on GaAs substrate s with an operational frequency up to 50 GHz.