MONOLITHIC INTEGRATION OF 850 NM QUANTUM-WELL MODULATORS TO VERY LARGE-SCALE INTEGRATED ELECTRONICS ON GAAS

We report a new, low-temperature process to monolithically integrate 8 50 nm modulators to pre-existing very large scale integrated GaAs elec tronics. We find that pristine GaAs surfaces form below 400 degrees C in the presence of energetic protons generated by an electron cyclotro n resonance plasma. 850 nm superlattices grown at 430 degrees C exhibi t perfect atomic structure when examined by X-ray diffraction, whereas nonradiative centers are detected with FL. With photocurrent spectros copy we find the performance of modulators, when grown under the new p rocess, good for systems that operate at lambda(0) but not at lambda(1 ).