INAS GAAS SHORT-PERIOD STRAINED-LAYER SUPERLATTICE MODULATORS GROWN USING ADVANCED DIGITAL REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TECHNIQUES/

We report the growth optimization of multiple quantum well and modulat or samples containing InAs/GaAs short-period strained-layer superlatti ce (SPSLS) wells using our advanced digitized reflection high-energy e lectron diffraction (RHEED) system. Modulator samples for both 980 nm and 1.06 mu m wavelengths have been investigated. Samples with narrow room temperature absorbance linewidths and rapidly decaying absorbance tails are necessary for state-of-the-art modulators. We have employed various conventional (only As shutter open) and total growth interrup t times (all shutters closed), as well as different InAs and GaAs grow th rates in order to optimize the SPSLSs.