ENHANCED ELECTRON-TRANSFER IN REAL-SPACE TRANSFER DEVICES USING STRAINED INXGA1-XAS (X=0.15, 0.25) CHANNEL LAYERS

Real-space transfer devices using strained InxGa1-xAs (x = 0.15, 0.25) channel layers and unstrained GaAs channel layers on GaAs substrates are fabricated with Pd/Ge ohmic contacts. The epitaxial structure is s tudied by transmission electron microscopy. Enhanced electron transfer and strong negative differential resistance are observed in strained InGaAs channel devices. The InGaAs channel devices also show lower lea kage currents, higher electron transfer efficiency, and higher drain c urrent peak-to-valley ratios.