GROUP-V COMPOSITION CONTROL FOR INGAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
LIANG BW TU CW
Citation
Bw. Liang et Cw. Tu, GROUP-V COMPOSITION CONTROL FOR INGAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 23(11), 1994, pp. 1251-1254
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
23
Issue
11
Year of publication
1994
Pages
1251 - 1254
Database
ISI
SICI code
0361-5235(1994)23:11<1251:GCCFIG>2.0.ZU;2-F
Abstract
Based on our kinetics models for gas source molecular beam epitaxy of mixed group-V ternary materials, the group-V composition control in In yGa1-yAs1-xPx epilayers has been studied. The P or As composition in I nyGa1-yAs1-xPx (lattice matched to InP or GaAs) can be obtained from a simple equation for substrate temperatures below 500 degrees C. This has been verified by a series of experimental results.