GROWTH OF LAYERED SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY - FORMATION AND CHARACTERIZATION OF GASE, MOSE2, AND PHTHALOCYANINE ULTRATHIN FILMS ON SULFUR-PASSIVATED GAP(111)

Authors
HAMMOND C BACK A LAWRENCE M NEBESNY K LEE P SCHLAF R ARMSTRONG NR
Citation
C. Hammond et al., GROWTH OF LAYERED SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY - FORMATION AND CHARACTERIZATION OF GASE, MOSE2, AND PHTHALOCYANINE ULTRATHIN FILMS ON SULFUR-PASSIVATED GAP(111), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1768-1775
Citations number
46
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
3
Year of publication
1995
Part
2
Pages
1768 - 1775
Database
ISI
SICI code
0734-2101(1995)13:3<1768:GOLSBM>2.0.ZU;2-#