LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING

Authors
LOVEJOY ML HOWARD AJ ZAVADIL KR RIEGER DJ SHUL RJ BARNES PA
Citation
Ml. Lovejoy et al., LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 758-762
Citations number
11
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
3
Year of publication
1995
Part
1
Pages
758 - 762
Database
ISI
SICI code
0734-2101(1995)13:3<758:LOCTMD>2.0.ZU;2-A