PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON, GERMANIUM, AND TIN NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS

Authors
HOFFMAN DM RANGARAJAN P ATHAVALE SD ECONOMOU DJ LIU JR ZHENG ZS CHU WK
Citation
Dm. Hoffman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON, GERMANIUM, AND TIN NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 820-825
Citations number
54
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
3
Year of publication
1995
Part
1
Pages
820 - 825
Database
ISI
SICI code
0734-2101(1995)13:3<820:PCOSGA>2.0.ZU;2-R