THE EFFECT OF THE PRESHEATH ON THE ION ANGULAR-DISTRIBUTION AT THE WAFER SURFACE

Authors
ZHENG J BRINKMANN RP MCVITTIE JP
Citation
J. Zheng et al., THE EFFECT OF THE PRESHEATH ON THE ION ANGULAR-DISTRIBUTION AT THE WAFER SURFACE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 859-864
Citations number
8
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
3
Year of publication
1995
Part
1
Pages
859 - 864
Database
ISI
SICI code
0734-2101(1995)13:3<859:TEOTPO>2.0.ZU;2-J