REACTIVE ION ETCHING-INDUCED DAMAGE IN GAAS ALGAAS QUANTUM-WELL STRUCTURES AND RECOVERY BY RAPID THERMAL ANNEALING AND HYDROGEN PASSIVATION/

Authors
YOO BS PARK SJ PARK KH
Citation
Bs. Yoo et al., REACTIVE ION ETCHING-INDUCED DAMAGE IN GAAS ALGAAS QUANTUM-WELL STRUCTURES AND RECOVERY BY RAPID THERMAL ANNEALING AND HYDROGEN PASSIVATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 931-934
Citations number
16
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
3
Year of publication
1995
Part
1
Pages
931 - 934
Database
ISI
SICI code
0734-2101(1995)13:3<931:RIEDIG>2.0.ZU;2-0