GROWTH OF GASB USING TRISDIMETHYLAMINOANTIMONY

The organometallic vapor phase epitaxial (OMVPE) growth of GaSb using a new Sb source, trisdimethylaminoantimony (TDMASb) is described for a wide temperature range between 450 and 600 degrees C. Good surface mo rphologies were obtained at low V/III ratios due to the effective pyro lysis of TDMASb. High growth efficiencies were observed at growth temp eratures as low as 475 degrees C. As the growth temperature was decrea sed, the incomplete decomposition of trimethylgallium (TMGa) was; foun d to lower the optimum V/III ratio necessary to produce layers with go od surface morphologies. The as-grown, unintentionally doped GaSb laye rs were p-type with background carrier concentrations of approximately 10(17) cm(-3). Well resolved 15 K photoluminescence spectra and X-ray diffraction data indicate the GaSb layers to be of high quality for t he growth temperature range studied. The results indicate that TDMASb is an excellent precursor for the OMVPE growth of GaSb over a wide ran ge of growth temperatures.