Jx. Hu et Rw. Peng, METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH TECHNIQUE OF GAALAS GAAS DOUBLE HETEROSTRUCTURES FOR PHOTOCATHODES/, Journal of crystal growth, 151(1-2), 1995, pp. 26-30
The growth technique of a large area Ga0.5Al0.5As/GaAs multilayer hete
rostructure for transmission mode photocathodes is described. The depe
ndence of the growth rate upon the aluminium composition and the growt
h temperature is discussed. Minority carrier diffusion lengths as high
as 7.59 mu m for a doping level of 2.0 x 10(18) cm(-3) are measured b
y the surface photovoltaic method. The materials obtained in this way
have smooth and mirror-like surfaces, good interfacial properties, and
excellent photoelectrical characteristics for the fabrication of phot
ocathodes.