METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH TECHNIQUE OF GAALAS GAAS DOUBLE HETEROSTRUCTURES FOR PHOTOCATHODES/

Authors
HU JX PENG RW
Citation
Jx. Hu et Rw. Peng, METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH TECHNIQUE OF GAALAS GAAS DOUBLE HETEROSTRUCTURES FOR PHOTOCATHODES/, Journal of crystal growth, 151(1-2), 1995, pp. 26-30
Citations number
16
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
151
Issue
1-2
Year of publication
1995
Pages
26 - 30
Database
ISI
SICI code
0022-0248(1995)151:1-2<26:MCGTOG>2.0.ZU;2-B
Abstract
The growth technique of a large area Ga0.5Al0.5As/GaAs multilayer hete rostructure for transmission mode photocathodes is described. The depe ndence of the growth rate upon the aluminium composition and the growt h temperature is discussed. Minority carrier diffusion lengths as high as 7.59 mu m for a doping level of 2.0 x 10(18) cm(-3) are measured b y the surface photovoltaic method. The materials obtained in this way have smooth and mirror-like surfaces, good interfacial properties, and excellent photoelectrical characteristics for the fabrication of phot ocathodes.