GROWTH OF CDSE NANOCRYSTALS IN ION-IMPLANTED SIO2-FILMS

Ion implantation technique has been used for the preparation of semico nductor nanocrystals in SiO2 films deposited on semiconductor and quar tz substrates. The structural properties of the films have been invest igated by using low temperature optical spectroscopy and high resoluti on electron microscopy, It is found that nucleation of the semiconduct or phase can take place in the course of implantation with high ion do se. The profile of both the concentration and the mean size of nanocry stals over the film thickness is determined by the initial distributio n of ions over the thickness and can be varied in a controlled manner with the use of sequential ion implantations with various energies and doses.