KINETIC EXPRESSION AND STUDY OF THE GROWTH-RATE OF MISMATCHED (GA,IN)AS INP STRUCTURES GROWN BY HYDRIDE VAPOR-PHASE EPITAXY/

A theoretical analysis of the growth rate of mismatched GaxIn1-xAs all oys (x=0.3-0.5) grown from gaseous chloride and hydride species is pre sented. A kinetic expression of the growth rate of ternary compounds i s developed according to a statistical treatment of the adsorption and desorption fluxes of activated species within the frame of Eyring's t heory. The kinetic model rakes into account the internal energy of the elastic deformation. Growth rate features are then discussed with res pect to the variations of the percentage of strain of the epilayers. I t is shown that the growth rate increases with the strain percentage f or a given composition for compressive systems, resulting from a prefe rential incorporation of the GaAs binary compound into the ternary sol id phase. This behaviour is explained looking at the variations of the chemical potentials of formation of the elementary binary compounds w hich constitute the ternary phase, as a function of the elastic energy of deformation.