EFFECTS OF SOURCE DRAIN IMPLANTS ON SHORT-CHANNEL MOSFET-I-V AND C-V CHARACTERISTICS/

The effects of source/drain implants on n-channel MOSFET I-V and C-V c haracteristics are measured and compared for the lightly doped drain ( LDD) and the large-angle-tilt implanted drain (LATID) devices, We show that despite substantial improvement in hot-carrier reliability for L ATID devices, the LATID design might have a limited range of applicati on for short-channel MOSFETs, This is because as a result of enhanced V-TH roll-off and increased overlap capacitance for the LATID devices compared to LDD devices, the device/circuit performance degrades, The degradation of performance becomes more pronounced as device length is reduced, These results are confirmed by both experimental data and 2- dimensional numerical simulations.