THE EFFECT OF METALLIZATION ON THE OHMIC CONTACT RESISTIVITY TO HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS

Authors
WERNER M DORSCH O BAERWIND HU OBERMEIER E JOHNSTON C CHALKER PR ROMANI S
Citation
M. Werner et al., THE EFFECT OF METALLIZATION ON THE OHMIC CONTACT RESISTIVITY TO HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1344-1351
Citations number
36
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
7
Year of publication
1995
Pages
1344 - 1351
Database
ISI
SICI code
0018-9383(1995)42:7<1344:TEOMOT>2.0.ZU;2-I
Abstract
Three metallization schemes, namely AI/Si, Ti-Au and TiWN-Au contacts on B-doped polycrystalline diamond films have been compared, After ann ealing at 450 degrees C in nitrogen AI/Si contacts show the lowest con tact resistivity in the order of similar to 10(-7) Ohm cm(2). TiWT-Au contacts were found to be the most stable contact system in view of in terdiffusion and oxidation. Ti-Au contacts show a catastrophic interdi ffusion at moderate annealing temperatures and strong oxidation at the very surface, High surface boron doping concentrations lead to tow co ntact resistivities. At sufficient high doping levels current transpor t through the metal-diamond barrier is due to field emission.