SCATTERING PARAMETER MEASUREMENTS OF RESONANT-TUNNELING DIODES UP TO 40 GHZ

The scattering parameters (S parameters) of double barrier quantum wel l resonant tunneling diodes have been measured at various biases with on-wafer probing techniques. Impedances up to 40 GHz for AlGaAs/GaAs d iodes with asymmetric spacer layers were obtained. It was found that t he impedances could be accurately described by the Lumped equivalent c ircuit representation. With the conductance-voltage characteristic der ived from high frequency S parameter measurement, the portions of curr ent-voltage curve that were distorted by oscillation in the de measure ment are recovered. Peaks corresponding to the process of electrons di scharging from the quantum well are found in the capacitance-voltage ( C-V) characteristic.