SCATTERING PARAMETER MEASUREMENTS OF RESONANT-TUNNELING DIODES UP TO 40 GHZ

Citation
T. Wei et al., SCATTERING PARAMETER MEASUREMENTS OF RESONANT-TUNNELING DIODES UP TO 40 GHZ, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1378-1380
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
42
Issue
7
Year of publication
1995
Pages
1378 - 1380
Database
ISI
SICI code
0018-9383(1995)42:7<1378:SPMORD>2.0.ZU;2-E
Abstract
The scattering parameters (S parameters) of double barrier quantum wel l resonant tunneling diodes have been measured at various biases with on-wafer probing techniques. Impedances up to 40 GHz for AlGaAs/GaAs d iodes with asymmetric spacer layers were obtained. It was found that t he impedances could be accurately described by the Lumped equivalent c ircuit representation. With the conductance-voltage characteristic der ived from high frequency S parameter measurement, the portions of curr ent-voltage curve that were distorted by oscillation in the de measure ment are recovered. Peaks corresponding to the process of electrons di scharging from the quantum well are found in the capacitance-voltage ( C-V) characteristic.