CARBON-DOPED GAINP GAAS DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN/

Authors
YANG YF HSU CC YANG ES
Citation
Yf. Yang et al., CARBON-DOPED GAINP GAAS DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN/, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1383-1386
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
7
Year of publication
1995
Pages
1383 - 1386
Database
ISI
SICI code
0018-9383(1995)42:7<1383:CGGDHB>2.0.ZU;2-3
Abstract
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transis tors (DHEBT's) grown by MOCVD were fabricated. A DC current gain of 43 0 (differential gain of 500) and an offset voltage of 25 mV were obtai ned. A gain up to 9 was achieved at a low collector current density of 10(-3) A/cm(2). By using a 600 Angstrom set-back layer in the collect or, the saturation (knee) voltage was found to be lower than 2 V at a collector current density of 1 x 10(4) A/cm(2). A cutoff frequency of 23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained.