Yf. Yang et al., CARBON-DOPED GAINP GAAS DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN/, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1383-1386
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transis
tors (DHEBT's) grown by MOCVD were fabricated. A DC current gain of 43
0 (differential gain of 500) and an offset voltage of 25 mV were obtai
ned. A gain up to 9 was achieved at a low collector current density of
10(-3) A/cm(2). By using a 600 Angstrom set-back layer in the collect
or, the saturation (knee) voltage was found to be lower than 2 V at a
collector current density of 1 x 10(4) A/cm(2). A cutoff frequency of
23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained.