DETERMINATION OF THE STOICHIOMETRY AND THE YB2+ YB3+ RATIO IN YBFX, OPTICAL IAD FILMS BY RES AND IN-SITU XPS ANALYSIS/

Thin films of YbF3 are interesting as a possible component in antirefl ection coatings matching the CO2 laser radiation. Ion assisted deposit ion (IAD) techniques for producing high density films were applied to this material and proved to be most successful in optimising the figur es of merit for this purpose (low absorption values, high damage thres holds). Our XPS and RBS measurements, however, reveal a deficiency of fluorine in these IAD films that becomes more pronounced with increasi ng ion bombardment. The deficiency correlates with an increasing Yb2+/ Yb3+ ratio determined by XPS. It can be concluded that the fluorine de ficiency is well compensated by a valence state transition of the Yb i on and the formation of a corresponding amount of YbF2 in the film. Th is process appears to be essential for avoiding metallic precipitation and achieving good optical film properties. By applying an in situ XP S technique, results have been obtained that are representative for th e bulk of the films as has been confirmed by RBS.