The influence of process parameters on the formation of microstructure
of magnetron-sputtered MoSx-films on silicon wafers was investigated.
The MoSx-films were analyzed by means of X-ray diffraction and TEM. T
he prepared MoSx-films show a microstructure in dimension of some nm w
ithout any prefered orientation or texture. The X-ray diffraction meas
urements indicate clearly differences in the structure for various pre
paration conditions. Simulations provided a first structural model for
the description of the MoSx-films. The MoSx-films consist of two-dime
nsional nanocrystals and noncrystallographic randomly packed (001) pla
nes. Transitions between these structural states and intermediate stat
es determine the microstructure depending on the preparation condition
s.