ATOMIC INCORPORATION EFFICIENCIES FOR STRAINED (GAIN)AS GA(PAS) SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

Symmetrically strained (GaIn)As/Ga(PAs) superlattice (symm. SLS) struc tures have been grown by metalorganic vapour phase epitaxy on (100) Ga As substrate and analyzed by high-resolution X-ray diffraction (XRD) i nvestigations. These studies reveal the high crystalline perfection wi th respect to small fluctuations in strain and individual layer thickn esses of the 50 period symm. SLS structures, having a total thickness of 1 mu m. Dynamical XRD theory has been applied to evaluate the preci se values of thicknesses and incorporated concentrations in the respec tive strained ternary layers. The strain-induced reduction in In-incor poration is determined quantitatively for the compressive strained (Ga In)As layer. The P-incorporation rate and the growth efficiency of the tensile strained Ga(PAs) layer is experimentally evaluated and discus sed in conjunction with theoretical incorporation models.