METALORGANIC MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON (100)GAAS SUBSTRATES USING TRIETHYLGALLIUM AND MONOMETHYLHYDRAZINE

Cubic GaN (c-GaN) epilayers have been successfully grown on (100)GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using trieth ylgallium and monomethylhydrazine (MMHy). It was demonstrated for the first time that MMHy can be used for GaN growth as a new nitrogen (N) source. The crystallinity and surface morphology of a c-GaN epilayer g rown without nitridation was found to be much better than that of GaN grown with nitridation. The highest growth rate of a c-GaN epilayer by MOMBE using MMHy with a flux of 1.4 x 10(-4) Torr was about 800 Angst rom/h at 620 degrees C. The quality of the c-GaN epilayer was best at a growth temperature of 660 degrees C, which was comparable to the opt imum growth temperature of c-GaN by conventional gas source MBE (molec ular beam epitaxy) on GaAs substrates.