HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY DETERMINATION OF CD DIFFUSION IN CDSE ZNSE SINGLE-QUANTUM-WELL STRUCTURES/

Authors
ROSENAUER A REISINGER T STEINKIRCHNER E ZWECK J GEBHARDT W
Citation
A. Rosenauer et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY DETERMINATION OF CD DIFFUSION IN CDSE ZNSE SINGLE-QUANTUM-WELL STRUCTURES/, Journal of crystal growth, 152(1-2), 1995, pp. 42-50
Citations number
15
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
152
Issue
1-2
Year of publication
1995
Pages
42 - 50
Database
ISI
SICI code
0022-0248(1995)152:1-2<42:HTEDOC>2.0.ZU;2-M
Abstract
The diffusion coefficient D(T) of Cd in CdSe/ZnSe single quantum well (SQW) structures grown pseudomorphically on GaAs(001) is determined by high resolution transmission electron microscopy of annealed SQWs and subsequent digital analysis of lattice images. SQWs of 2 monolayer (M L) thickness were grown by molecular beam epitaxy. During growth the C dSe quantum wells (QWs) broaden to about 7 ML CdZnSe as measured by re flection high energy electron diffraction (RHEED). We find for the dif fusion coefficient of Cd in ZnSe at temperatures between 340 and 400 d egrees C D(T) = 1.9 x 10(-4) [cm(2)/s]. exp(-1.8 [eV]/kT).