FORMATION AND PHOTOLUMINESCENCE SPECTRUM OF W-GAN POWDER

Authors
LI HD YANG HB ZOU GT YU S LU JS QU SC WU Y
Citation
Hd. Li et al., FORMATION AND PHOTOLUMINESCENCE SPECTRUM OF W-GAN POWDER, Journal of crystal growth, 171(1-2), 1997, pp. 307-310
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
171
Issue
1-2
Year of publication
1997
Pages
307 - 310
Database
ISI
SICI code
0022-0248(1997)171:1-2<307:FAPSOW>2.0.ZU;2-5
Abstract
Ultrafine gallium nitride (GaN) powder has been synthesized using the direct current (DC) are plasma method. Structural and morphological ch anges with different reaction gases (N-2, NH3 and N-2-NH3, respectivel y) were studied by X-ray diffractometry and transmission electron micr oscopy. GaN powder has a wurtzite structure. Measurement of the band-e dge photoluminescence spectrum of w-GaN powder indicated that at room temperature the emission peak was situated at 367 nm.