A HIGH FILL FACTOR AND PROGRESSIVE SCAN PTSI SCHOTTKY-BARRIER IR-CCD IMAGE SENSOR USING NEW WIRING TECHNOLOGY

A back surface illuminated 130 x 130 pixel PtSi Schottky-barrier (SE) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring. CLOSE Wiring, designed to effectively ut ilize the space over the SB photodiodes, brings about flexibility in c lock line designing, high fill factor, and large charge handling capab ility in a vertical CCD (VCCD). This image sensor uses a progressive s canned interline-scheme, and has a 64.4% fill factor in a 30 mu m x 30 mu m pixel, a 3.9 mm x 3.9 mm image area, and a 5.5 mm x 5.5 mm chip size. The charge handling capability for the 3.3 mu m wide VCCD achiev es 9.8 x 10(5) electrons. The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with a 50 mm f/1. 3 lens.