ANALYSIS OF THE HIGH INJECTION EFFECTS IN SILICON BIPOLAR-TRANSISTORSAT LOW-TEMPERATURES

There are usually two explanations for the physical reasons of the hig h injection effects in silicon bipolar transistors: one is the effecti ve base widening effect proposed by Kirk, the other is the base conduc tivity modulation effect proposed by Webster, the emitter current crow ding effect intensifies these two effects. In this paper, low temperat ure characteristics of these three important effects are analyzed and the dominant physical mechanism which determines the high injection ef fects at low temperatures is presented. The obtained calculate results are in agreement with the experiments.